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BDS16 - Silicon NPN Power Transistor

BDS16 Description

NCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDS16 .
High Voltage: VCEV= 120V(Min). Low Saturation Voltage- : VCE(sat)= 1. High Reliablity. Minimum Lot-to-Lot variations.

BDS16 Applications

* Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IB Base Curre

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Datasheet Details

Part number
BDS16
Manufacturer
Inchange Semiconductor
File Size
210.32 KB
Datasheet
BDS16-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BDS16-like datasheet

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