BDS16 Silicon NPN Power Transistor

Inchange Semiconductor

Description

NCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDS16 .
High Voltage: VCEV= 120V(Min). Low Saturation Voltage- : VCE(sat)= 1. High Reliablity. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: BDS16
Manufacturer: Inchange Semiconductor
File Size: 210.32 KB
Datasheet: BDS16-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IB Base Curre

BDS16 Distributors

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BDS16 Silicon NPN Power Transistor Inchange Semiconductor

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