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IRF645

N-Channel Mosfet Transistor

IRF645 Features

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Lower Leakage Current: 10mA (Max.) @ VDS = 250V

* DESCRITION

* Designed especially for high voltage,high speed applications, such as

IRF645 Datasheet (40.27 KB)

Preview of IRF645 PDF

Datasheet Details

Part number:

IRF645

Manufacturer:

Inchange Semiconductor

File Size:

40.27 KB

Description:

N-channel mosfet transistor.

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TAGS

IRF645 N-Channel Mosfet Transistor Inchange Semiconductor

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