KTD998 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor KTD998 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Complement to Type KTB778. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: KTD998
Manufacturer: Inchange Semiconductor
File Size: 223.62 KB
Datasheet: KTD998-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* High power amplifier applications
* Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC

KTD998 Distributors

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KTD998 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor KTD998-like datasheet