Datasheet4U Logo Datasheet4U.com

KTD998

Silicon NPN Power Transistors

KTD998 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
*Good Linearity of hFE
*Complement to Type KTB778
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*High power amplifier applications
*Recommend for 45-50W audio freque.

KTD998 Datasheet (223.62 KB)

Preview of KTD998 PDF

Datasheet Details

Part number:

KTD998

Manufacturer:

Inchange Semiconductor

File Size:

223.62 KB

Description:

Silicon npn power transistors.

📁 Related Datasheet

KTD998 TRIPLE DIFFUSED NPN TRANSISTOR (KEC)

KTD921 TRIPLE DIFFUSED NPN TRANSISTOR (KEC)

KTD1003 EPITAXIAL PLANAR NPN TRANSISTOR (KEC)

KTD101B105M32A0T00 DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)

KTD101B106M80A0B00 DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)

KTD101B107M99A0B00 DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)

KTD101B155M32A0T00 DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)

KTD101B155M43A0T00 DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)

KTD101B156M80A0B00 DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)

KTD101B225M32A0T00 DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)

TAGS

KTD998 Silicon NPN Power Transistors Inchange Semiconductor

Image Gallery

KTD998 Datasheet Preview Page 2

KTD998 Distributor