TTD1415B Silicon NPN Power Transistor

Inchange

Description

isc Silicon NPN Darlington Power Transistor TTD1415B .
High DC Current Gain- : hFE = 2000(Min)@ IC= 3A. Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1. Complement to.

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Datasheet Specifications

Part number: TTD1415B
Manufacturer: Inchange
File Size: 218.67 KB
Datasheet: TTD1415B-Inchange.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A

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TTD1415B Silicon NPN Power Transistor Inchange

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