TTD1415B - Silicon NPN Power Transistor
*High DC Current Gain- : hFE = 2000(Min)@ IC= 3A *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A *Complement to Type TTB1020B *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general-purpose
