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2SA1051 POWER TRANSISTOR

2SA1051 Description

isc Silicon PNP Power Transistor 2SA1051 .
High Current Capability. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. High Power Dissipation. Minimum Lot-to-Lot var.

2SA1051 Applications

* Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Pow

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POWER TRANSISTOR Inchange Semiconductor
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