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2SA1789 Power Transistor

2SA1789 Description

isc Silicon PNP Power Transistor 2SA1789 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device per.

2SA1789 Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipat

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