Datasheet4U Logo Datasheet4U.com

2SC2522 - Silicon NPN Power Transistor

2SC2522 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min). Fast Switching Speed. Wide Area of Safe Operation. Complement to Type.

2SC2522 Applications

* High frequency power amplifier
* Audio power amplifiers
* Switching regulators
* DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Coll

📥 Download Datasheet

Preview of 2SC2522 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SC2522
Manufacturer
Inchange Semiconductor
File Size
207.97 KB
Datasheet
2SC2522-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • 2SC2523 - NPN Transistor (INCHANGE)
  • 2SC2525 - NPN Transistor (INCHANGE)
  • 2SC2526 - SILICON HIGH SPEED POWER TRANSISTOR (Fujitsu Media Devices Limited)
  • 2SC2527 - SILICON HIGH SPEED POWER TRANSISTOR (Fujitsu Media Devices)
  • 2SC2500 - TRANSISTOR (Toshiba Semiconductor)
  • 2SC2501 - NPN Transistor (INCHANGE)
  • 2SC2502 - NPN Transistor (INCHANGE)
  • 2SC2504 - Transistor (Shindengen)

📌 All Tags

Inchange Semiconductor 2SC2522-like datasheet