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2SC2707 - Power Transistor

2SC2707 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min. High Power Dissipation. Complement to Type 2SA1147. Minimum Lot-to-Lot v.

2SC2707 Applications

* Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB

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Power Transistor Inchange Semiconductor
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