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BD791 Silicon NPN Power Transistor

BD791 Description

isc Silicon NPN Power Transistor BD791 .
High Collector. Emitter Sustaining Voltage. VCEO(sus) = 100 Vdc (Min). High DC Current Gain @ IC = 200 mAdc hFE = 40.

BD791 Applications

* Designed for low power audio amplifier and low current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Co

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Datasheet Details

Part number
BD791
Manufacturer
Inchange Semiconductor
File Size
208.71 KB
Datasheet
BD791-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BD791-like datasheet