Datasheet4U Logo Datasheet4U.com

BDY13-6 - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of BDY13-6 PDF
datasheet Preview Page 2

Datasheet Details

Part number BDY13-6
Manufacturer Inchange Semiconductor
File Size 207.54 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDY13-6-InchangeSemiconductor.pdf

BDY13-6 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications.

📁 BDY13-6 Similar Datasheet

  • BDY13 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
  • BDY10 - Silicon NPN Transistor (Valvo)
  • BDY11 - Silicon NPN Transistor (Valvo)
  • BDY12 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
  • BDY20 - Bipolar NPN Device (Seme LAB)
  • BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
  • BDY23A - Bipolar NPN Device (Seme LAB)
  • BDY23B - Bipolar NPN Device (Seme LAB)
Other Datasheets by Inchange Semiconductor
Published: |