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BDY20 - Silicon NPN Power Transistor

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Datasheet Details

Part number BDY20
Manufacturer Inchange Semiconductor
File Size 208.49 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDY20-InchangeSemiconductor.pdf

BDY20 Product details

Description

Excellent Safe Operating Area DC Current Gain -hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V

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