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IRF644A - N-Channel Mosfet Transistor

IRF644A Description

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF644A *.

IRF644A Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10mA (Max. ) @ VDS = 250V
* Lower RDS(ON): 0.214Ω (Typ. )
* DESCRITION
* Designed especially for high voltage

IRF644A Applications

* such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±30 V V ID Drain Current-Continuous 14 A IDM Drain Curr

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Datasheet Details

Part number
IRF644A
Manufacturer
Inchange Semiconductor
File Size
40.38 KB
Datasheet
IRF644A-InchangeSemiconductor.pdf
Description
N-Channel Mosfet Transistor

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N-Channel Mosfet Transistor Inchange Semiconductor
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