IRF644NS Datasheet - International Rectifier

IRF644NS Power MOSFET

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB version is currently available in a Deslecardi-pfrteieonconfiguration) Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug.

IRF644NS Features

* Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 10.54 (.415) 10.29 (.405) 4 3.78 (.149) 3.54 (.139) -A- 6.47 (.255) 6.10 (.240) 1 23 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) 4.69 (.185) 4.20 (.165) -B- 1

IRF644NS_InternationalRectifier.pdf