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IRF644N Datasheet - International Rectifier

Power MOSFET

IRF644N Features

* A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y

IRF644N General Description

l Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi.

IRF644N Datasheet (123.94 KB)

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Datasheet Details

Part number:

IRF644N

Manufacturer:

International Rectifier

File Size:

123.94 KB

Description:

Power mosfet.
PD - 94107 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Parall.

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IRF644N Power MOSFET International Rectifier

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