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KTB2955 - Silicon PNP Power Transistors

KTB2955 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Complement to Type KTD3055 APPLICATIONS. High power amplifier applications.

KTB2955 Applications

* High power amplifier applications
* Recommended for 30~35W audio frequency amplifier output stage application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V

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Datasheet Details

Part number
KTB2955
Manufacturer
Inchange Semiconductor
File Size
145.18 KB
Datasheet
KTB2955-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

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Silicon PNP Power Transistors Inchange Semiconductor
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