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MJ3055 Silicon NPN Power Transistor

MJ3055 Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. DC Current Gain-hFE=20-70@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

MJ3055 Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base C

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Datasheet Details

Part number
MJ3055
Manufacturer
Inchange Semiconductor
File Size
206.86 KB
Datasheet
MJ3055-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJ3055-like datasheet