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MJH16012 Silicon NPN Power Transistor

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Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor .
Collector-Emitter Voltage- : VCEO(SUS)= 450V(Min). Fast Turn-Off Time APPLICATIONS Designed for high-voltage, high-speed applications as:.

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Datasheet Specifications

Part number
MJH16012
Manufacturer
Inchange Semiconductor
File Size
146.09 KB
Datasheet
MJH16012-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for high-voltage, high-speed applications as:
* Switching Regulators
* Inverters
* Relay Drivers
* Deflection Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage 850 VCEO(SUS) Collector-Emitter Voltage 450 VEBO Emitter-Base

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