📁 CFY67-08P Similar Datasheet
- CFY25 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
- CFY25-17 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
- CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
- CFY25-20P - HiRel X-Band GaAs MOSFET (Infineon)
- CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
- CFY25-23P - HiRel X-Band GaAs MOSFET (Infineon)
- CFY25-P - HiRel X-Band GaAs MOSFET (Infineon)
- CFY30 - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) (Siemens Semiconductor Group)