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IPA093N06N3 Power Transistor

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Description

Type OptiMOSTM3 Power-Transistor .

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Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acc

Applications

* Type IPA093N06N3 G IPA093N06N3 G Product Summary VDS RDS(on),max ID 60 V 9.3 mW 43 A Package Marking PG-TO220 FP 093N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,p

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