IPD170N04NG Datasheet, Power-transistor, Infineon Technologies

IPD170N04NG Features

  • Power-transistor
  • Fast switching MOSFET for SMPS
  • Optimized technology for DC/DC converters
  • Qualified according to JEDEC1) for target applications
  • N-channel, normal

PDF File Details

Part number:

IPD170N04NG

Manufacturer:

Infineon ↗ Technologies

File Size:

188.22kb

Download:

📄 Datasheet

Description:

Power-transistor.

Datasheet Preview: IPD170N04NG 📥 Download PDF (188.22kb)
Page 2 of IPD170N04NG Page 3 of IPD170N04NG

IPD170N04NG Application

  • Applications
  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)

TAGS

IPD170N04NG
Power-Transistor
Infineon Technologies

📁 Related Datasheet

IPD100N04S4-02 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

IPD100N06S4-03 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature.

IPD105N03LG - Power Transistor (Infineon)
Kg_T % #  % ' #  % #  % ) #  %&$ #  % (> .;?6 ?@ <> 7NJ\]ZN[ b %> <1 A0@' A.

IPD10N03LA - OptiMOS2 Power-Transistor (Infineon Technologies)
IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to.

IPD110N12N3 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2.

IPD110N12N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanch.

IPD110N12N3G - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2.

IPD122N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.2mΩ ·Enhancement mode: ·100% avalan.

IPD122N10N3 - Power-Transistor (Infineon)
IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPD122N10N3G - Power-Transistor (Infineon)
IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 40V 30A TO252-3
DigiKey
IPD170N04NGBTMA1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts