IPP051NE8NG Datasheet, Power-transistor, Infineon Technologies

IPP051NE8NG Features

• Power-transistor
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-

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IPP051NE8NG

Manufacturer:

Infineon ↗ Technologies

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📄 Datasheet

Description:

Power-transistor.

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IPP051NE8NG

Infineon Technologies

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