IPP050N03LF2S Datasheet, Mosfet, Infineon

IPP050N03LF2S Features

  • Mosfet
  • Optimized for a wide range of applications
  • N‑channel, logic level
  • 100% avalanche tested
  • 175°C rated
  • Pb‑free lead plating; RoHS complian

PDF File Details

Part number:

IPP050N03LF2S

Manufacturer:

Infineon ↗

File Size:

835.46kb

Download:

📄 Datasheet

Description:

Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Datasheet Preview: IPP050N03LF2S 📥 Download PDF (835.46kb)
Page 2 of IPP050N03LF2S Page 3 of IPP050N03LF2S

IPP050N03LF2S Application

  • Applications
  • N‑channel, logic level
  • 100% avalanche tested
  • 175°C rated
  • Pb‑free lead plating; RoHS compliant <

TAGS

IPP050N03LF2S
MOSFET
Infineon

📁 Related Datasheet

IPP050N06N - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.

IPP050N06NG - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.

IPP051N15N5 - MOSFET (Infineon)
IPP051N15N5 MOSFET OptiMOSª5 Power-Transistor, 150 V Features • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 .

IPP051N15N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP051N15N5,IIPP051N15N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switchi.

IPP051NE8NG - Power-Transistor (Infineon Technologies)
.. IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x .

IPP052N06L3 - Power-Transistor (Infineon)
Jf]R IPB049N06L3 G IPP052N06L3 G %&$ #™3 Power-Transistor Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8J.

IPP052N06L3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.7mΩ ·Enhancement mode ·Fast Switch.

IPP052N06L3G - Power-Transistor (Infineon Technologies)
Jf]R IPB049N06L3 G IPP052N06L3 G %&$ #™3 Power-Transistor Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8J.

IPP052N08N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev. 2.0 Final Power Manage.

IPP052N08N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP052N08N5,IIPP052N08N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.2mΩ ·Enhancement mode ·Fast Switchi.

Stock and price

Infineon Technologies AG
MOSFET N-CH 30V 50A TO220-3
DigiKey
IPP050N03LF2SAKSA1
949 In Stock
Qty : 10000 units
Unit Price : $0.3
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts