IPP057N06N3 Datasheet, Mosfet, INCHANGE

IPP057N06N3 Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤5.7mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations

PDF File Details

Part number:

IPP057N06N3

Manufacturer:

INCHANGE

File Size:

241.95kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Ideal for high frequency switching

Optimized technology for DC/DC converters

ABSOLUTE MAXIMUM RATINGS(Ta=

IPP057N06N3 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPP057N06N3

INCHANGE

📁 Related Datasheet

IPP057N06N3 - Power-Transistor (Infineon)
Ie\Q IPB054N06N3 G IPP057N06N3 G %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>?

IPP057N06N3G - Power-Transistor (Infineon)
Ie\Q IPB054N06N3 G IPP057N06N3 G %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>?

IPP057N08N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP057N08N3， IIPP057N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switch.

IPP057N08N3 - Power-Transistor (Infineon)
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D .

IPP057N08N3G - Power-Transistor (Infineon)
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D .

IPP050N03LF2S - MOSFET (Infineon)
Public IPP050N03LF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel,.

IPP050N06N - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.

IPP050N06NG - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.

IPP051N15N5 - MOSFET (Infineon)
IPP051N15N5 MOSFET OptiMOSª5 Power-Transistor, 150 V Features • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 .

IPP051N15N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP051N15N5，IIPP051N15N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switchi.