IPP057N06N3G
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Power-transistor.
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IPP057N06N3 - Power-Transistor
(Infineon)
Ie\Q
IPB054N06N3 G IPP057N06N3 G
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>?
IPP057N06N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP057N06N3， IIPP057N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switch.
IPP057N08N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP057N08N3， IIPP057N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switch.
IPP057N08N3 - Power-Transistor
(Infineon)
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G
%&$ #™3 Power-Transistor
Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D .
IPP057N08N3G - Power-Transistor
(Infineon)
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G
%&$ #™3 Power-Transistor
Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D .
IPP050N03LF2S - MOSFET
(Infineon)
Public
IPP050N03LF2S Final datasheet
MOSFET
StrongIRFET™ 2 Power‑Transistor, 30 V
Features
• Optimized for a wide range of applications • N‑channel,.
IPP050N06N - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
IPP050N06NG - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
IPP051N15N5 - MOSFET
(Infineon)
IPP051N15N5
MOSFET
OptiMOSª5 Power-Transistor, 150 V
Features
• Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 .
IPP051N15N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP051N15N5，IIPP051N15N5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switchi.
