IPP052N08N5 - N-Channel MOSFET
IPP052N08N5 Features
* Static drain-source on-resistance: RDS(on) ≤5.2mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* reliable device for use in a wide variety of applications
