Datasheet Details
- Part number
- IPP052N08N5
- Manufacturer
- INCHANGE
- File Size
- 240.64 KB
- Datasheet
- IPP052N08N5-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPP052N08N5 Description
isc N-Channel MOSFET Transistor IPP052N08N5，IIPP052N08N5 *.
IPP052N08N5 Features
* Static drain-source on-resistance:
RDS(on) ≤5.2mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IPP052N08N5 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
80
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
80
IDM
Drain Current-Single Pulsed
320
PD
Total Dissipation @TC=25℃
125
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Te
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