IPP052N06L3 Datasheet, Power-transistor, Infineon

IPP052N06L3 Features

• Power-transistor R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8J 7@C    4@? G6CE6CD R I46==6? E82 E6 492 C86 IR 9I"[# AC@5F4E ) '  R( 492 ? ? 6= =@8:4 =6G6= R 

PDF File Details

Part number:

IPP052N06L3

Manufacturer:

Infineon ↗

File Size:

681.84kb

Download:

📄 Datasheet

Description:

Power-transistor.

TAGS

IPP052N06L3

Infineon

📁 Related Datasheet

IPP052N06L3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.7mΩ ·Enhancement mode ·Fast Switch.

IPP052N06L3G - Power-Transistor (Infineon Technologies)
Jf]R IPB049N06L3 G IPP052N06L3 G %&$ #™3 Power-Transistor Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8J.

IPP052N08N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev. 2.0 Final Power Manage.

IPP052N08N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP052N08N5，IIPP052N08N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.2mΩ ·Enhancement mode ·Fast Switchi.

IPP052NE7N3 - N-Channel MOSFET (INCHANGE)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP052NE7N3，IIPP052NE7N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.2mΩ ·Enhance.

IPP052NE7N3 - Power-Transistor (Infineon)
%&$ #B< # : A 0<& <,9=4=>: < 6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4  .

IPP052NE7N3G - Power-Transistor (Infineon Technologies)
%&$ #B< # : A 0<& <,9=4=>: < 6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4  .

IPP050N03LF2S - MOSFET (Infineon)
Public IPP050N03LF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel,.

IPP050N06N - Power-Transistor (Infineon)
OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.

IPP050N06NG - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.