Datasheet Details
- Part number
- IPP052N08N5
- Manufacturer
- Infineon ↗
- File Size
- 1.76 MB
- Datasheet
- IPP052N08N5-Infineon.pdf
- Description
- MOSFET
IPP052N08N5 Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev.2.0 Final Power Manage.
Features.
Ideal for high frequency switching and sync.
Excellent gate charge x RDS(on) product (FOM).
Very low on-res.
IPP052N08N5 Features
* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to J
IPP052N08N5 Applications
* Halogen-free according to IEC61249-2-21
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
5.2
mΩ
ID 80 A
Qoss
51
nC
QG(0V. .10V)
42
nC
OptiMOSª5 Power-Transistor, 80 V IPP052N08N5
TO-220-3
tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Typ
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