IPP051N15N5
1.50MB
Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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📁 Related Datasheet
IPP051N15N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP051N15N5,IIPP051N15N5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switchi.
IPP051NE8NG - Power-Transistor
(Infineon Technologies)
..
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x .
IPP050N03LF2S - MOSFET
(Infineon)
Public
IPP050N03LF2S Final datasheet
MOSFET
StrongIRFET™ 2 Power‑Transistor, 30 V
Features
• Optimized for a wide range of applications • N‑channel,.
IPP050N06N - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
IPP050N06NG - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
IPP052N06L3 - Power-Transistor
(Infineon)
Jf]R
IPB049N06L3 G IPP052N06L3 G
%&$ #™3 Power-Transistor
Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J.
IPP052N06L3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP052N06L3,IIPP052N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.7mΩ ·Enhancement mode ·Fast Switch.
IPP052N06L3G - Power-Transistor
(Infineon Technologies)
Jf]R
IPB049N06L3 G IPP052N06L3 G
%&$ #™3 Power-Transistor
Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J.
IPP052N08N5 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª5 Power-Transistor, 80 V IPP052N08N5
Data Sheet
Rev. 2.0 Final
Power Manage.
IPP052N08N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP052N08N5,IIPP052N08N5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.2mΩ ·Enhancement mode ·Fast Switchi.