Datasheet Details
- Part number
- IPP055N03L
- Manufacturer
- INCHANGE
- File Size
- 246.43 KB
- Datasheet
- IPP055N03L-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPP055N03L Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP055N03L，IIPP055N03L *.
IPP055N03L Features
* Static drain-source on-resistance:
RDS(on) ≤5.5mΩ
* Enhancement mode:
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IPP055N03L Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
350
PD
Total Dissipation @TC=25℃
68
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Tem
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