IPP055N03L N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP055N03L，IIPP055N03L *.

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Datasheet Specifications

Part number: IPP055N03L
Manufacturer: INCHANGE
File Size: 246.43 KB
Datasheet: IPP055N03L-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤5.5mΩ
* Enhancement mode:
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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N-Channel MOSFET INCHANGE

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