IPP05CN10N Datasheet - INCHANGE

IPP05CN10N, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP05CN10N，IIPP05CN10N *

Features

* Static drain-source on-resistance: RDS(on) ≤5.1mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 300 Tj Max.
Operating Junction Temperature 175 Tstg Storage

IPP05CN10N-INCHANGE.pdf