Datasheet Details
- Part number
- IPP05CN10N
- Manufacturer
- INCHANGE
- File Size
- 240.66 KB
- Datasheet
- IPP05CN10N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPP05CN10N Description
isc N-Channel MOSFET Transistor IPP05CN10N，IIPP05CN10N *.
IPP05CN10N Features
* Static drain-source on-resistance:
RDS(on) ≤5.1mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IPP05CN10N Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
100
IDM
Drain Current-Single Pulsed
400
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage
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