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2ED21814S06J

650V half-bridge gate driver

2ED21814S06J Features

* Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology

* Negative VS transient immunity of 100 V

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) upto + 650 V

* Maximum bootstrap voltage (VB node) of + 675 V

* Integrated ultra-fast

2ED21814S06J General Description

The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negativ.

2ED21814S06J Datasheet (1.39 MB)

Preview of 2ED21814S06J PDF

Datasheet Details

Part number:

2ED21814S06J

Manufacturer:

Infineon ↗

File Size:

1.39 MB

Description:

650v half-bridge gate driver.

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2ED21814S06J 650V half-bridge gate driver Infineon

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