2ED2183S06F
1.17MB
650v half-bridge gate driver. The 2ED2183(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side refer
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2ED21834S06J - 650V half-bridge gate driver
(Infineon)
2ED2183 (4) S06F (J)
2ED2183 (4) S06F (J)
650 V half-bridge gate driver with integrated bootstrap diode
Features
• Unique Infineon Thin-Film-Silicon.
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Unique Infineon Thin-F.
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2ED2109 (4) S06F (J)
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(Infineon)
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650 V half bridge gate driver with integrated bootstrap diode
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• Unique Infineon Thin-Film-Silicon.
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Infineon thin-film-SOI-technology Fully ope.
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(Infineon)
EiceDRIVER™ APD 2ED2410-EM
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12 V/24 V smart analog high-side MOSFET gate driver
Features • PRO-SIL™ ISO 26262-ready for supporting the integr.