IGB20N65S5 - IGBT

Datasheet Summary

Description

Features

High speed S5 technology offering.
High speed smooth switching device for hard & soft switching.
Very Low VCEsat, 1.35V at nominal current.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low QG.
Maximum junction temperature 175°C.
Pb-free lead plating; RoHS compliant.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ C G E C Potential.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IGB20N65S5
Manufacturer	Infineon
File Size	1.33 MB
Description	IGBT
Datasheet	IGB20N65S5 Datasheet
Additional preview pages of the IGB20N65S5 datasheet.

📁 Similar Datasheet

IGB01N120H2 - IGBT (Infineon Technologies)
IGB03N120H2 - IGBT (Infineon Technologies)
IGB15N60T - IGBT (Infineon Technologies)

Other Datasheets by Infineon

IGB20N60H3 - IGBT
IGB070S10S1 - 100V Transistor
IGB10N60T - IGBT
IGB110S101 - 100V Transistor
IGB110S10S1 - 100V Transistor
IGB15N65S5 - IGBT
IGB30N60H3 - IGBT
IGB30N60T - IGBT

Full PDF Text Transcription

Click to expand full text

IGB20N65S5 Highspeedswitchingseriesfifthgeneration TRENCHSTOPTM5highspeedsoftswitchingIGBT FeaturesandBenefits: HighspeedS5technologyoffering •Highspeedsmoothswitchingdeviceforhard&softswitching •VeryLowVCEsat,1.35Vatnominalcurrent •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Jun 10, 2020 |