IGB110S10S1 - 100V Transistor

Datasheet Summary

Description

1 Maximum ratings 3 R

Features

Ultra fast switching and high efficiency.
Space saving and highly robust package.
No reverse recovery charge.
Ultra low gate charge and output charge.
Exposed die for top‑side thermal excellence.
Moisture rating MSL1.
Industrial grade 3x3 package Potential.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IGB110S10S1
Manufacturer	Infineon
File Size	1.14 MB
Description	100V Transistor
Datasheet	IGB110S10S1 Datasheet
Additional preview pages of the IGB110S10S1 datasheet.

📁 Similar Datasheet

IGB15N60T - IGBT (Infineon Technologies)
IGB01N120H2 - IGBT (Infineon Technologies)
IGB03N120H2 - IGBT (Infineon Technologies)

Other Datasheets by Infineon

IGB110S101 - 100V Transistor
IGB10N60T - IGBT
IGB15N65S5 - IGBT
IGB070S10S1 - 100V Transistor
IGB20N60H3 - IGBT
IGB20N65S5 - IGBT
IGB30N60H3 - IGBT
IGB30N60T - IGBT

Full PDF Text Transcription

Click to expand full text

Public IGB110S10S1 Final datasheet CoolGaNTM CoolGaNTM Transistor 100 V G3 Features • Ultra fast switching and high efficiency • Space saving and highly robust package • No reverse recovery charge • Ultra low gate charge and output charge • Exposed die for top‑side thermal excellence • Moisture rating MSL1 • Industrial grade 3x3 package Potential applications • Telecom & Datacenter 48V IBC • Sync Rectification for AC‑DC and DC‑DC converters • Robotics and drones • Battery powered tools • 48V servo drive • e‑Mobility, UAVs • Class D Audio • Solar & Energy storage systems • Point of Load Converters Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22 and J‑STD‑020.

Published: Jun 17, 2024 |