IGB110S10S1 Datasheet - Infineon

IGB110S10S1 100V Transistor

IGB110S10S1 Features

* Ultra fast switching and high efficiency

* Space saving and highly robust package

* No reverse recovery charge

* Ultra low gate charge and output charge

* Exposed die for top‑side thermal excellence

* Moisture rating MSL1

* Industrial grade 3

Datasheet Details

IGB110S10S1

1.14 MB

100v transistor.

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IGB110S10S1 IGB110S10S1 100V Transistor Infineon

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