* TRENCHSTOPTM technology offering
* very low turn-off energy
* low VCEsat
* low EMI
* maximum junction temperature 175°C
* qualified according to JEDEC for target applications
* Pb-free lead plating, halogen-free mould compound, RoHS compliant
IGB30N60H3 Datasheet (1.41 MB)
IGB30N60H3
1.41 MB
Igbt.
IGBT
High speed IGBT in Trench and Fieldstop technology
IGB30N60H3
600V high speed switching series third generation
Data sheet
Industrial Power Contr.
📁 Related Datasheet
IGB30N60T - IGBT
(Infineon)
IGB30N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Ju.
IGB01N120H2 - IGBT
(Infineon Technologies)
IGB01N120H2
HighSpeed 2-Technology
• Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners
• 2nd generation HighSpee.
IGB03N120H2 - IGBT
(Infineon Technologies)
IGB03N120H2
HighSpeed 2-Technology
• Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners
• 2nd generation HighSpee.
IGB070S10S1 - Transistor
(Infineon)
IGB070S10S1
CoolGaNTM Transistor 100 V G3
Features
• Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse .
IGB10N60T - IGBT
(Infineon)
IGB10N60T
TRENCHSTOP™ Series
p
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Ju.
IGB110S101 - Transistor
(Infineon)
IGB110S101
CoolGaNTM Transistor 100 V G3
Features
• Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse c.
IGB110S10S1 - Transistor
(Infineon)
IGB110S10S1
CoolGaNTM Transistor 100 V G3
Features
• Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse .
IGB15N60T - IGBT
(Infineon Technologies)
IGB15N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
C
Features:
Very low VCE(sat) 1.5V (typ.) Maximum.
