IGB50N65H5 - IGBT

Datasheet Summary

Description

Features

High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low QG.
Maximum junction temperature 175°C.
Pb-free lead plating; RoHS compliant.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ C G E C Potential.

Infineon

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Datasheet Details

Part number	IGB50N65H5
Manufacturer	Infineon
File Size	1.33 MB
Description	IGBT
Datasheet	IGB50N65H5 Datasheet
Additional preview pages of the IGB50N65H5 datasheet.

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Full PDF Text Transcription

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IGB50N65H5 Highspeedswitchingseriesfifthgeneration HighspeedIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Jun 10, 2020 |