Click to expand full text
High Speed IGBT3 Chip
IGC19T65QE
Features: 650V Trench & Field Stop technology high speed switching series third
generation low VCE(sat) low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target
applications
Recommended for: discrete components and
modules
Applications: uninterruptible power supplies welding converters converters with high switching
frequency
C
G E
Chip Type
VCE
ICn1)
Die Size
Package
IGC19T65QE 650V 40A 4.84 x 3.98 mm2
sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization
Mechanical Parameters Die size Emitter pad size Gate pad size
4.84 x 3.98 See chip drawing
0.608 x 0.646
mm2
Area total Thickness Wafer size Max.
IGC19T65QE Datasheet
