IGC19T65QE

IGBT

Infineon

IGC19T65QE Features

* 650V Trench & Field Stop technology

* high speed switching series third generation

* low VCE(sat)

* low EMI

* low turn-off losses

* positive temperature coefficient

* qualified according to JEDEC for target applications Recommended for:

* discrete components and m

IGC19T65QE General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG A.

IGC19T65QE Datasheet (227.55 KB)