IMDQ65R007M2H Datasheet - Infineon

IMDQ65R007M2H, SiC MOSFET

Public IMDQ65R007M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,.
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Datasheet Details

Part number:

IMDQ65R007M2H

Manufacturer:

Infineon ↗

File Size:

1.20 MB

Description:

SiC MOSFET

Features

* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha

Applications

* SMPS
* Solar PV inverters
* Energy storage and battery formation
* UPS
* EV charging infrastructure
* Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and driver source pins are no

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