IMDQ65R010M2H 650V SiC MOSFET

Infineon

Description

Public IMDQ65R010M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,.
1 Maxi.

📥 Download Datasheet

IMDQ65R010M2H Datasheet Preview — Preview of IMDQ65R010M2H PDF

Datasheet Specifications

Part number: IMDQ65R010M2H
Manufacturer: Infineon ↗
File Size: 1.20 MB
Datasheet: IMDQ65R010M2H-Infineon.pdf
Description: 650V SiC MOSFET

Features

* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha

Applications

* SMPS
* Solar PV inverters
* Energy storage and battery formation
* UPS
* EV charging infrastructure
* Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and driver source pins are no

IMDQ65R010M2H Distributors

📁 Related Datasheet

IMD10 IMD10A IMD10AMT1G IMD14 IMD16A IMD1A

📌 All Tags

650V SiC MOSFET Infineon

Infineon IMDQ65R010M2H-like datasheet