Datasheet4U Logo Datasheet4U.com

IMDQ65R010M2H - 650V SiC MOSFET

IMDQ65R010M2H Description

Public IMDQ65R010M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,.
1 Maxi.

IMDQ65R010M2H Features

* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha

IMDQ65R010M2H Applications

* SMPS
* Solar PV inverters
* Energy storage and battery formation
* UPS
* EV charging infrastructure
* Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and driver source pins are no

📥 Download Datasheet

Preview of IMDQ65R010M2H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IMD10 - Dual Digital Transistor (Rohm)
  • IMD10A - Power management Transistors (Rohm)
  • IMD10AMT1G - Dual Bias Resistor Transistor (ON Semiconductor)
  • IMD14 - Dual Digital Transistor (Rohm)
  • IMD16A - Power management (Rohm)
  • IMD1A - Dual Digital Transistor (Rohm)
  • IMD2A - Dual Digital Transistor (Rohm)
  • IMD2AT110 - Dual Digital Transistor (Rohm)

📌 All Tags

650V SiC MOSFET Infineon
Infineon IMDQ65R010M2H-like datasheet

IMDQ65R010M2H Stock/Price