IMDQ65R010M2H

650V SiC MOSFET

Infineon

IMDQ65R010M2H Features

* Ultra‑low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage

* Flexible driving voltage and compatible with bipolar driving scheme

* Robust body diode operation under ha

IMDQ65R010M2H General Description

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IMDQ65R010M2H Datasheet (1.20 MB)

IMDQ65R010M2H Datasheet Preview — Preview of IMDQ65R010M2H PDF

Datasheet Details

Part number:

IMDQ65R010M2H

Manufacturer:

Infineon ↗

File Size:

1.20 MB

Description:

650v sic mosfet.
Public IMDQ65R010M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,.

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IMDQ65R010M2H 650V SiC MOSFET Infineon

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IMDQ65R010M2H Features

IMDQ65R010M2H General Description

Datasheet Details

File Size:

Description:

IMDQ65R010M2H Distributor