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IMW120R350M1H

Silicon Carbide MOSFET

IMW120R350M1H Features

* Very low switching losses Gate pin 1

* Threshold-free on state characteristic

* Wide gate-source voltage range

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* 0V turn-off gate voltage for easy and simple gate drive

* Fully controllable dV/dt

* Robust body

IMW120R350M1H Datasheet (1.19 MB)

Preview of IMW120R350M1H PDF

Datasheet Details

Part number:

IMW120R350M1H

Manufacturer:

Infineon ↗

File Size:

1.19 MB

Description:

Silicon carbide mosfet.

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IMW120R350M1H Silicon Carbide MOSFET Infineon

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