Part number:
IMW120R350M1H
Manufacturer:
File Size:
1.19 MB
Description:
Silicon carbide mosfet.
* Very low switching losses Gate pin 1
* Threshold-free on state characteristic
* Wide gate-source voltage range
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage for easy and simple gate drive
* Fully controllable dV/dt
* Robust body
IMW120R350M1H Datasheet (1.19 MB)
IMW120R350M1H
1.19 MB
Silicon carbide mosfet.
📁 Related Datasheet
IMW120R007M1H - MOSFET
(Infineon)
IMW120R007M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • ID.
IMW120R020M1H - MOSFET
(Infineon)
IMW120R020M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • ID.
IMW120R030M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R030M1H
IMW120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.
IMW120R040M1H - 1200V SiC Trench MOSFET
(Infineon)
IMW120R040M1H
CoolSiC™ 1200 V SiC Trench MOSFET
Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at.
IMW120R045M1 - 1200V SiC Trench MOSFET
(Infineon)
IMW120R045M1
IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
Threshold-free on s.
IMW120R060M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R060M1H
IMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.
IMW120R090M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R090M1H
IMW120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.
IMW120R140M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R140M1H
IMW120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.