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IMW120R350M1H - 1200V SiC Trench MOSFET

Infineon

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Datasheet Details

Part number	IMW120R350M1H
Manufacturer	Infineon
File Size	1.24 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMW120R350M1H-Infineon.pdf

IMW120R350M1H Product details

Features

Very low switching losses Gate pin 1.
Threshold-free on state characteristic.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses Benefits.
Efficiency improvement.
Enabling higher frequency.
Increased power density.
Cooling ef.

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Published: Jul 2, 2020 |