IPD036N04L
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Power-transistor.
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IPD036N04L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.6mΩ ·Enhancement mode: ·100% avalanch.
IPD036N04LG - Power-Transistor
(Infineon)
Type
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.
IPD031N03L - Power-Transistor
(Infineon)
Kf^S
%&$ #b %
IPD031N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch.
IPD031N03LG - Power-Transistor
(Infineon)
Kf^S
%&$ #b %
IPD031N06L3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD031N06L3, IIPD031N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avala.
IPD031N06L3 - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD031N06L3G - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD033N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanch.
IPD033N06N - MOSFET
(Infineon)
IPD033N06N
MOSFET
OptiMOSTM Power-Transistor, 60 V
Features
• Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.