IPD038N06N3
609.49kb
Power-transistor.
TAGS
📁 Related Datasheet
IPD038N06N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD038N06N3,IIPD038N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.8mΩ ·Enhancement mode: ·100% avalanc.
IPD038N06N3G - Power-Transistor
(Infineon Technologies)
Id\Q
%&$ #a # : A 0<& <,9=4=>: <
6LHZ[XLY P G3 5<<5>C71C5 3 81A75 G( 9H [Z# @A? 4D3 C ( & P. 5AH F ? > A5B9BC1>3 5 ( 9H [Z# P' 3 81>>5< .
IPD031N03L - Power-Transistor
(Infineon)
Kf^S
%&$ #b %
IPD031N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch.
IPD031N03LG - Power-Transistor
(Infineon)
Kf^S
%&$ #b %
IPD031N06L3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD031N06L3, IIPD031N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avala.
IPD031N06L3 - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD031N06L3G - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD033N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanch.
IPD033N06N - MOSFET
(Infineon)
IPD033N06N
MOSFET
OptiMOSTM Power-Transistor, 60 V
Features
• Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.