IPD19DP10NM Datasheet, Mosfet, Infineon

PDF File Details

Part number:

IPD19DP10NM

Manufacturer:

Infineon ↗

File Size:

1.75MB

Download:

📄 Datasheet

Description:

Mosfet.

TAGS

IPD19DP10NM

Infineon

📁 Related Datasheet

IPD100N04S4-02 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

IPD100N06S4-03 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature.

IPD105N03LG - Power Transistor (Infineon)
Kg_T %   #   % '   #   %   #   % )   #   %&$ #  % (> .;?6 ?@ <> 7NJ\]ZN[ b %> <1 A0@' A.

IPD10N03LA - OptiMOS2 Power-Transistor (Infineon Technologies)
IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to.

IPD110N12N3 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2.

IPD110N12N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanch.

IPD110N12N3G - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2.

IPD122N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.2mΩ ·Enhancement mode: ·100% avalan.

IPD122N10N3 - Power-Transistor (Infineon)
IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPD122N10N3G - Power-Transistor (Infineon)
IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.