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IPD800N06NG Power-Transistor

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Description

IPD800N06N G OptiMOS® Power-Transistor .

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Features

* For fast switching converters and sync. rectification
* N-channel enhancement - normal level
* 175 °C operating temperature
* Avalanche rated
* Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 80 16 V mΩ A Type IPD800N06N G Pa

IPD800N06NG Distributors

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