IPD800N06NG Datasheet, Power-transistor, Infineon

IPD800N06NG Features

  • Power-transistor
  • For fast switching converters and sync. rectification
  • N-channel enhancement - normal level
  • 175 °C operating temperature
  • Avalanche rated

PDF File Details

Part number:

IPD800N06NG

Manufacturer:

Infineon ↗

File Size:

528.45kb

Download:

📄 Datasheet

Description:

Power-transistor.

Datasheet Preview: IPD800N06NG 📥 Download PDF (528.45kb)
Page 2 of IPD800N06NG Page 3 of IPD800N06NG

TAGS

IPD800N06NG
Power-Transistor
Infineon

📁 Related Datasheet

IPD80N04S3-06 - Power-Transistor (Infineon)
IPD80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 40 5.2 90 V mΩ A Features • N-channel - Enhancement mode • Automotiv.

IPD80N06S3-09 - Power-Transistor (Infineon)
IPD80N06S3-09 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 8.4 80 V mΩ A Features • N-channel - Normal Level - Enhancement m.

IPD80P03P4L-07 - Power-Transistor (Infineon)
IPD80P03P4L-07 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on) ID -30 6.8 -80 V mΩ A Features • P-channel - Logic Level - Enhancement mo.

IPD80R1K0CE - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.2 Final Power Man.

IPD80R1K0CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalan.

IPD80R1K2P7 - Power-Transistor (Infineon)
IPD80R1K2P7 MOSFET 800V CoolMOSª P7 Power Transistor The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .

IPD80R1K4CE - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.3 Final Power Man.

IPD80R1K4P7 - MOSFET (Infineon)
IPD80R1K4P7 MOSFET 800V CoolMOSª P7 Power Transistor The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .

IPD80R280P7 - MOSFET (Infineon)
IPD80R280P7 MOSFET 800V CoolMOSª P7 Power Transistor The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .

IPD80R2K0P7 - Power-Transistor (Infineon)
IPD80R2K0P7 MOSFET 800V CoolMOSª P7 Power Transistor The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 60V 16A TO252-3
DigiKey
IPD800N06NGBTMA1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts