IPD80N06S3-09, Infineon
IPD80N06S3-09
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on),max ID 55 8.4 80 V mΩ A
Features • N-channel - Normal Level - Enhancement m.
IPD800N06NG, Infineon
IPD800N06N G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 .
IPD80P03P4L-07, Infineon
IPD80P03P4L-07
OptiMOS®-P2 Power-Transistor
Product Summary V DS R DS(on) ID -30 6.8 -80 V mΩ A
Features • P-channel - Logic Level - Enhancement mo.
IPD80R1K0CE, Infineon
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
800V CoolMOS™ CE Power Transistor IPx80R1K0CE
Data Sheet
Rev. 2.2 Final
Power Man.
IPD80R1K2P7, Infineon
IPD80R1K2P7
MOSFET
800V CoolMOSª P7 Power Transistor
The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
IPD80R1K4CE, Infineon
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
800V CoolMOS™ CE Power Transistor IPx80R1K4CE
Data Sheet
Rev. 2.3 Final
Power Man.
IPD80R1K4P7, Infineon
IPD80R1K4P7
MOSFET
800V CoolMOSª P7 Power Transistor
The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and .
