IPDQ60R007CM8 Datasheet - Infineon

IPDQ60R007CM8 high voltage power MOSFET

IPDQ60R007CM8 MOSFET 600V CoolMOSª CM8 Power Transistor PG-HDSOP-22 The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V 22 CoolMOS™ CM8 series is the successor to the CoolMOS™ 7. It combines the benefits of a fast switching SJ MOSFET with excellent 12 TAB ease of use, e.g low ringing tendency, implemented fast body diode (CFD) 1 for all.

IPDQ60R007CM8 Features

* Suitable for hard and soft switching topologies thanks to an   outstanding commutation ruggedness

* Significant reduction of switching and conduction losses

* Best in class RDS(on) per package products enabled by ultra low RDS(on)

* A Benefits

* Ease of use and f

IPDQ60R007CM8-Infineon.pdf