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IPDQ60R007CM8 Datasheet - Infineon

IPDQ60R007CM8 - high voltage power MOSFET

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IPDQ60R007CM8 MOSFET 600V CoolMOSª CM8 Power Transistor PG-HDSOP-22 The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

The 600V 22 CoolMOS™ CM8 series is the successor to the CoolMOS™ 7.

It combines the benefits of a fast switching SJ MOSFET with excellent 12 TAB ease of use, e.g low ringing tendency, implemented fast body diode (CFD) 1 for all

IPDQ60R007CM8 Features

* Suitable for hard and soft switching topologies thanks to an   outstanding commutation ruggedness

* Significant reduction of switching and conduction losses

* Best in class RDS(on) per package products enabled by ultra low RDS(on)

* A Benefits

* Ease of use and f

IPDQ60R007CM8-Infineon.pdf

Preview of IPDQ60R007CM8 PDF
IPDQ60R007CM8 Datasheet Preview Page 2 IPDQ60R007CM8 Datasheet Preview Page 3

Datasheet Details

Part number:

IPDQ60R007CM8

Manufacturer:

Infineon ↗

File Size:

1.13 MB

Description:

High voltage power mosfet.

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