IPDQ60R010S7 - 600V SJ S7 Power MOSFET
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
1 Maximum ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
Public IPDQ60R010S7 Final datasheet CoolMOS™ S7 600V CoolMOS™ SJ S7 Power Device IPDQ60R010S7 enables the best price performance for low frequency switching applications.
CoolMOS™ S7 boasts the lowest RDS(on) values for a HV SJ MOSFET, with distinctive increase of energy efficiency.
CoolMOS™ S7 is optimized for “static switching” and high current applications.
It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
IPDQ60R010S7 Features
* CoolMOS™ S7 technology enables 10mΩ RDS(on) in the smallest footprint
* Optimized price performance in low frequency switching applications
* High pulse current capability
* Kelvin Source pin improves switching performance at high current
* QDPAK bottom side
