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PXFC191507FC Datasheet - Infineon

PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET

PXFC191507FC Features

* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =

PXFC191507FC-Infineon.pdf

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Datasheet Details

Part number:

PXFC191507FC

Manufacturer:

Infineon ↗

File Size:

337.96 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXFC191507FC PXFC191507FC Thermally-Enhanced High Power LDMOS FET Infineon

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