PXFC191507FC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

The PXFC191507FC by Infineon is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

📥 Download Datasheet

PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET by Infineon - Datasheet Preview — Official preview page of the **PXFC191507FC** Thermally-Enhanced High Power RF LDMOS FET datasheet (Infineon).

Datasheet Details

Part number	PXFC191507FC
Manufacturer	Infineon
File Size	337.96 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXFC191507FC-Infineon.pdf
Additional preview pages of the PXFC191507FC datasheet.

PXFC191507FC Product details

Description

The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 22 BW 3.84 MHz 21 Gain 60 50 20 40 19 30 18 20 Efficiency 17 10 16 29 33 37 41 45 Output Power (dBm) c.

📁 PXFC191507FC Similar Datasheet

PXF4333 - ABM 3G ATM Buf fer Manager (Infineon Technologies AG)
PXF4336 - ABM Premium ATM Buf fer Manager (Infineon Technologies AG)
PXFE181507FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXFE211507FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)

Other Datasheets by Infineon

PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET
PXFC192207NF - Thermally-Enhanced High Power RF LDMOS FET
PXFC192207SH - Thermally-Enhanced High Power RF LDMOS FET
PXFC193808SV - Thermally-Enhanced High Power RF LDMOS FET
PXFC211507SC - Thermally-Enhanced High Power RF LDMOS FET
PXFC212551SC - Thermally-Enhanced High Power RF LDMOS FET

Published: Feb 19, 2016 |