Datasheet Details
- Part number
- IPA057N08N3G
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 597.54 KB
- Datasheet
- IPA057N08N3G_InfineonTechnologies.pdf
- Description
- MOSFET
IPA057N08N3G Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 80V OptiMOS™3 Power-Transistor IPA057N08N3 G Data Sheet Rev.2.2 F.
IPA057N08N3G Features
* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acc
IPA057N08N3G Applications
* Halogen-free according to IEC61249-2-21
* Fully isolated package (2500 VAC; 1 minute)
Type
IPA057N08N3 G
IPA057N08N3 G
Product Summary VDS RDS(on),max ID
80 V 5.7 mW 60 A
Package Marking
PG-TO220-FP 057N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Paramete
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