* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table
ITCH22210B2 Datasheet (936.51 KB)
ITCH22210B2
Innogration
936.51 KB
High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd. Document Number: ITCH22210B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 210W, 28V High Power RF LDMOS FETs Descript.
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