ITCH22210B2 - High Power RF LDMOS FET

Innogration

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Datasheet Details

Part number	ITCH22210B2
Manufacturer	Innogration
File Size	936.51 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH22210B2-Innogration.pdf

ITCH22210B2 Product details

Description

The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .Frequency Gp P-1dB P-3dB D@P-3 (MHz) (dB) (dBm)

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Published: Aug 5, 2018 |